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ACST6 数据表(PDF) 3 Page - STMicroelectronics |
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ACST6 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 15 page ![]() ACST6 Characteristics Doc ID 7297 Rev 9 3/15 Table 4. Static characteristics Symbol Test conditions Value Unit VTM (1) 1. For both polarities of OUT pin referenced to COM pin IOUT = 2.1 A, tp = 500 µs Tj = 25 °C MAX. 1.4 V IOUT = 8.5 A, tp = 500 µs 1.7 VT0 (1) Threshold voltage Tj = 125 °C MAX. 0.9 V Rd (1) Dynamic resistance Tj = 125 °C MAX. 80 m Ω IDRM IRRM VOUT = VDRM/ VRRM Tj = 25 °C MAX. 20 µA Tj = 125 °C MAX. 500 µA Table 5. Thermal resistances Symbol Parameter Value Unit Rth(j-a) Junction to ambient TO-220AB TO-220FPAB 60 °C/W I²PAK 65 Junction to ambient (soldered on 1 cm2 copper pad) D²PAK 45 Rth(j-c) Junction to case for full cycle sine wave conduction TO-220FPAB 4.25 °C/W TO-220AB D²PAK , I²PAK 2.5 Figure 2. Maximum power dissipation versus rms on-state current Figure 3. On-state rms current versus case temperature (full cycle) 0 1 2 3 4 5 6 7 8 01 2 3 4 5 6 P(W) α = 180° IT(RMS)(A) 180° 0 1 2 3 4 5 6 7 0 25 50 75 100 125 IT(RMS)(A) TC(°C) TO-220FPAB TO-220AB D²PAK I²PAK α = 180° |
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