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STPSC406 数据表(PDF) 3 Page - STMicroelectronics

部件名 STPSC406
功能描述  600 V power Schottky silicon carbide diode
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STPSC406 数据表(HTML) 3 Page - STMicroelectronics

  STPSC406 Datasheet HTML 1Page - STMicroelectronics STPSC406 Datasheet HTML 2Page - STMicroelectronics STPSC406 Datasheet HTML 3Page - STMicroelectronics STPSC406 Datasheet HTML 4Page - STMicroelectronics STPSC406 Datasheet HTML 5Page - STMicroelectronics STPSC406 Datasheet HTML 6Page - STMicroelectronics STPSC406 Datasheet HTML 7Page - STMicroelectronics STPSC406 Datasheet HTML 8Page - STMicroelectronics  
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STPSC406
Characteristics
Doc ID 16283 Rev 1
3/8
Figure 1.
Forward voltage drop versus
forward current (typical values)
Figure 2.
Reverse leakage current versus
reverse voltage applied
(maximum values)
I
FM(A)
0
1
2
3
4
5
6
7
8
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
T
j=150 °C
T
j=150 °C
T
j=175 °C
T
j=175 °C
T
j=25 °C
T
j=25 °C
VFM(V)
I
R(µA)
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
0
50
100
150
200
250
300
350
400
450
500
550
600
T
j=25 °C
T
j=25 °C
T
j=150 °C
T
j=150 °C
T
j=175 °C
T
j=175 °C
VR(V)
Figure 3.
Peak forward current versus case
temperature (TO-220AC)
Figure 4.
Peak forward current versus case
temperature (DPAK)
I
M(A)
0
5
10
15
20
25
30
35
0
25
50
75
100
125
150
175
T
δ=tp/T
tp
δ=0.1
δ=0.3
δ=0.5
d=1
δ=1
d=0.7
δ=0.7
TC(°C)
I
M(A)
0
5
10
15
20
25
30
35
0
25
50
75
100
125
150
175
T
δ=tp/T
tp
δ=0.1
δ=0.3
δ=0.5
d=1
δ=1
d=0.7
δ=0.7
TC(°C)
Figure 5.
Junction capacitance versus
reverse voltage applied
(typical values)
Figure 6.
Relative variation of thermal
impedance junction to case
versus pulse duration (TO-220AC)
C(pF)
0
25
50
75
100
125
150
1
10
100
1000
F=1 MHz
V
OSC=30 mVRMS
T
j=25 °C
VR(V)
Z
th(j-c)/Rth(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Single pulse
tp(s)



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