September 2009

Doc ID 16286 Rev 1

1/7

7

STPSC806

600 V power Schottky silicon carbide diode

Features

temperature

function

Description

The SiC diode is an ultrahigh performance power

Schottky diode. It is manufactured using a silicon

carbide substrate. The wide bandgap material

allows the design of a Schottky diode structure

with a 600 V rating. Due to the Schottky

construction no recovery is shown at turn-off and

ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of

temperature.

ST SiC diodes will boost the performance of PFC

operations in hard switching conditions.

Table 1.

Device summary

8 A

600 V

175 °C

10 nC

K

A

TO-220AC

STPSC806D

www.st.com