PDTA144VT datasheet(5/18 Pages) NXP

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PDTA144V_SER_4

Product data sheet

Rev. 04 — 3 September 2009

5 of 18

NXP Semiconductors

PDTA144V series

PNP resistor-equipped transistors; R1 = 47 k

Ω, R2 = 10 kΩ

Characteristics

Table 8.

Characteristics

Tamb = 25 °C unless otherwise speciﬁed

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB = −50 V; IE = 0 A

−100

ICEO

collector-emitter

cut-off current

VCE = −30 V; IB = 0 A

−1

µA

VCE = −30 V; IB = 0 A;

Tj = 150 °C

−50

µA

IEBO

emitter-base cut-off

current

VEB = −5 V; IC = 0 A

−150

µA

hFE

DC current gain

VCE = −5 V; IC = −5 mA

VCEsat

collector-emitter

saturation voltage

IC = −10 mA; IB = −0.5 mA

−150

VI(off)

off-state input voltage

VCE = −5 V; IC = −100 µA-

−3.1

−1V

VI(on)

on-state input voltage

VCE = −300 mV; IC = −2mA

−6

−3.8

bias resistor 1 (input)

Ω

R2/R1

bias resistor ratio

0.17

0.21

0.26

collector capacitance

VCB = −10 V; IE = ie = 0 A;

f=1MHz

--2

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