PDTC123JS datasheet(5/14 Pages) NXP

部件名	PDTC123JS

功能描述	NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 47 k廓

PDF	14 Pages

Scroll/Zoom	100%

制造商	NXP [NXP Semiconductors]

网页	http://www.nxp.com

标志

5 / 14 page

2004 Aug 13

NXP Semiconductors

Product data sheet

NPN resistor-equipped transistors;

R1 = 2.2 k

Ω, R2 = 47 kΩ

PDTC123J series

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB = 50 V; IE = 0

−

100

ICEO

collector-emitter cut-off current

VCE = 30 V; IB = 0

−

μA

VCE = 30 V; IB = 0; Tj = 150 °C

−

μA

IEBO

emitter-base cut-off current

VEB = 5 V; IC = 0

−

180

μA

hFE

DC current gain

VCE = 5 V; IC = 10 mA

100

−

VCEsat

collector-emitter saturation voltage

IC = 5 mA; IB = 0.25 mA

−

100

Vi(off)

input-off voltage

IC = 100 μA; VCE = 5 V

−

0.6

0.5

Vi(on)

input-on voltage

IC = 5 mA; VCE = 0.3 V

1.1

0.75

−

input resistor

1.54

2.2

2.86

resistor ratio

collector capacitance

IE = ie = 0; VCB = 10 V; f = 1 MHz

−

2.5

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