TPCA8024

2010-01-05

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)

TPCA8024

Lithium-Ion Battery Applications

Notebook PC Applications

Portable Equipment Applications

• Small footprint due to a small and thin package

Characteristics

Symbol

Rating

Unit

Drain-source voltage

30

V

30

V

Gate-source voltage

±20

V

DC

(Note 1)

35

Drain current

Pulse (Note 1)

105

A

Drain power dissipation

(Tc=25℃)

35

W

Drain power dissipation

(t

= 10 s)

(Note 2a)

2.8

W

Drain power dissipation

(t

= 10 s)

(Note 2b)

1.6

W

Single pulse avalanche energy

(Note 3)

159

mJ

Avalanche current

35

A

Repetitive avalanche energy

(Tc=25℃) (Note 4)

3.5

mJ

Channel temperature

150

°C

Storage temperature range

-55 to 150

°C

Note: For Note 1 to 4, refer to the next page.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability

test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

Unit: mm

8

5

1

4

4.25

± 0.2

5.0

± 0.2

S

S

0.05

A

0.595

0.4

± 0.1

1

4

0.15

± 0.05

8

5

1.27

A

0.05 M

JEDEC

―

JEITA

―

TOSHIBA

2-5Q1A

Weight: 0.069 g (typ.)

Circuit Configuration

8

6

1

2

3

7

5

4

1,2,3: SOURCE

4: GATE

5,6,7,8: DRAIN