STPS61L60C datasheet(3/8 Pages) STMICROELECTRONICS

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STPS61L60C

Characteristics

Doc ID 15641 Rev 1

3/8

Figure 1.

Average forward power dissipation

vs. average forward current

(per diode)

Figure 2.

Average forward current vs.

ambient temperature

(

δ = 0.5, per diode)

δ=0.05

δ=0.1

δ=0.2

δ=0.5

δ=1

δ=tp/T

(A)

F(av)

(W)

F(av)

(A)

F(av)

100

125

150

th(j-a)=Rth(j-c)

th(j-a)=15 °C/W

δ=tp/T

TO-247

TO-220AB

Tamb(°C)

Figure 3.

Normalized avalanche power

derating vs. pulse duration

Figure 4.

Normalized avalanche power

derating vs. junction temperature

0.001

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(t )

(1µs)

ARM p

ARM

0.2

0.4

0.6

0.8

1.2

100

125

150

P(T )

(25 °C)

ARM

T (°C)

Figure 5.

Non repetitive surge peak forward

current vs. overload duration (max.

values, per diode, TO-247)

Figure 6.

Non repetitive surge peak forward

current vs. overload duration (max.

values, per diode, TO-220AB)

I (A)

100

150

200

250

300

350

1.E-03

1.E-02

1.E-01

1.E+00

c=25 °C

c=75 °C

c=125 °C

δ =0.5

t(s)

100

150

200

250

300

350

1.E-03

1.E-02

1.E-01

1.E+00

c=25 °C

c=75 °C

c=125 °C

δ =0.5

I (A)

t(s)

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