STX790A datasheet(3/10 Pages) STMICROELECTRONICS

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STX790A

Electrical characteristics

Doc ID 9406 Rev 4

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Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE = 0)

VCB = -30 V

VCB = -30 V;

TC = 100 °C

-10

-100

µA

IEBO

Emitter cut-off current

(IC = 0)

VEB = -4 V

-10

µA

V(BR)CEO

(1)

Collector-emitter

breakdown voltage

(IB = 0)

IC = -10 mA

-30

V(BR)CER

(1)

Collector-emitter

breakdown voltage

(RBE = 47 Ω)

IC = -10 mA

-40

V(BR)CBO

Collector-base

breakdown voltage

(IE = 0)

IC = -100 µA

-40

V(BR)EBO

Emitter-base breakdown

voltage (IC = 0)

IE = -100 µA

-5

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = -0.5 A

IB = -5 mA

IC = -1.2 A

IB = -20 mA

IC = -2 A

IB = -20 mA

IC = -3 A

IB = -100 mA

IC = -3 A

IB = -100 mA

TC = 100 °C

-0.15

-0.25

-0.5

-0.7

-0.9

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = -1A

IB = -10mA

-0.8

-1

VBE(on)

(1)

Base-emitter on voltage

IC = -1A

VCE = -2V

-0.8

-1

hFE

(1)

DC current gain

IC = -10mA

VCE = -2V

IC = -500mA

VCE = -2V

IC = -1A

VCE = -2V

IC = -2A

VCE = -1V

IC = -3A

VCE = -1V

100

200

160

130

400

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