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TPC8403 数据表(PDF) 9 Page - Toshiba Semiconductor |
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TPC8403 数据表(HTML) 9 Page - Toshiba Semiconductor |
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9 / 11 page ![]() TPC8403 2006-11-13 9 N-channel 0 0 10 20 30 40 8 16 24 32 16 12 8 4 0 VDD = 24 V Common source ID = 6 A Ta = 25°C Pulse test VGS 0 −80 0 160 80 1 2 3 Common source VDS = 10 V ID = 1 mA Pulse test −40 40 120 1 0.1 1 10 100 10 100 1000 10000 Common source Ta = 25°C f = 1MHz VGS = 0 V Ciss Coss Crss 0.3 3 30 0 −80 50 30 10 0 −40 40 80 120 160 60 40 20 Common source Pulse test VGS = 4.5 V 6 A VGS = 10 V ID = 1.5 A 3 A 6 A ID = 1.5 A 3 A RDS (ON) – Ta IDR – VDS Capacitance – VDS Vth – Ta PD – Ta Dynamic input/output characteristics Ambient temperature Ta (°C) Drain-source voltage VDS (V) Drain-source voltage VDS (V) Ambient temperature Ta (°C) Ambient temperature Ta (°C) Total gate charge Qg (nC) 0.1 0 −0.2 −0.4 −0.6 −0.8 −1.2 0.3 0.5 1 10 3 5 −1.0 30 Common source Ta = 25°C Pulse test 10 5 3 1 VGS = 0 V 0 0 0.4 0.8 1.2 1.6 2 40 80 200 160 120 Device mounted on a glass-epoxy board ( a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s (1) (2) (3) (4) |
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