Monolithic CMOS Analog Multiplexers

2

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ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional

operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to

absolute maximum rating conditions for extended periods may affect device reliability.

Voltage Referenced to V-

V+ .....................................................................................+44V

GND ................................................................................. +25V

or 20mA, whichever occurs first

Current (any terminal, except S or D) .................................30mA

Continuous Current, S or D .................................................20mA

Peak Current, S or D (pulsed at 1ms, 10% duty cycle max) ..40mA

Plastic DIP (derate 10.53mW/°C above +70°C) ...........842mW

Narrow SO (derate 8.70mWI°C above +70°C) .............696mW

Wide SO (derate 9.52mW/°C above +70°C).................762mW

CERDIP (derate 10.00mW/°C above +70°C) ................800mW

Operating Temperature Ranges:

DG50_ACJ/CWE ..................................................0°C to +70°C

DG50_ABK........................................................-20°C to +85°C

DG50_ADJ/DY/EWE..........................................-40°C to +85°C

DG50_AAK/MY ...............................................-55°C to +125°C

Storage Temperature Range .............................-65°C to +150°C

Lead Temperature (soldering, 10s) .................................+300°C

Soldering Temperature (reflow)

PDIP, Wide SO, Narrow SO, CERDIP containing lead(Pb)..+240°C

PDIP, Wide SO, Narrow SO lead(Pb)-free ....................+260°C

Note 1: Signals on S_ or D_ exceeding V+ or V- are clamped by internal diodes. Limit forward-diode current to maximum current ratings

DG508AA/M

DG509AA/M

DG508AD/E/B/C

DG509AD/E/B/C

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

MIN

TYP

MAX

UNITS

SWITCH

Analog Signal

-15

+15

-15

+15

V

170

400

170

450

Drain-Source On-

Resistance

Sequence each

switch on,

130

400

130

450

Greatest Change

in Drain-Source

On-Resistance

Between Channels

=

-10V

10V

6

6

%

0.002

0.5

0.002

1

Source Off-

Leakage Current

-0.5

-0.005

-1

-0.005

nA

0.01

2

0.01

5

DG508A

-2

-0.015

-5

-0.015

0.005

2

0.005

5

Drain Off-

Leakage

Current

DG509A

-2

-0.008

-5

-0.008

nA

0.015

2

0.015

5

DG508A

-2

-0.03

-5

-0.03

0.007

2

0.007

5

Drain On-

Leakage

Current

DG509A

Sequence each

switch on,

(Note 2)

-2

-0.015

-5

-0.015

nA