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INT100 数据表(PDF) 3 Page - Power Integrations, Inc. |
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INT100 数据表(HTML) 3 Page - Power Integrations, Inc. |
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3 / 12 page ![]() C 6/96 INT100 3 Pin Functional Description Pin 1: V DD supplies power to the logic, high- side interface, and low-side driver. Pin 2: Active-low logic level input HS IN HS IN HS IN HS IN HS IN controls the high-side driver output. Pin 3: Active-high logic level input LS IN controls the low-side driver output. Pin 4, 5: COM connection is used as the analog reference point for the circuit. Pin 7: LS RTN is the power reference point for the low-side circuitry, and should be connected to the source of the low-side MOSFET and to the COM pin. Pin 8: LS OUT is the driver output which controls the low-side MOSFET. Pin 11: HS OUT is the driver output which controls the high-side MOSFET. Pin 12,13,14: HS RTN is the power reference point for the high-side circuitry, and should be connected to the source of the high-side MOSFET. Pin 15: V DDH supplies power to the high-side control logic and output driver. This is normally connected to a high-side referenced bootstrap circuit or can be supplied from a separate floating power supply. INT100 Functional Description 5 V Regulators Both low-side and high-side driver circuits incorporate a 5 V linear regulator circuit. The low-side regulator provides the supply voltage for the control logic and high-voltage level shift circuit. This allows HS IN and LS IN to be directly compatible with 5 V CMOS logic without the need of an external 5 V supply. The high-side regulator provides the supply voltage for the noise rejection circuitry and high-side control logic. Undervoltage Lockout The undervoltage lockout circuit for the low-side driver disables both the LS OUT and HS OUT pins whenever the V DD power supply falls below typically 9.0 V, and maintains this condition until the V DD power supply rises above typically 9.35 V. This guarantees that both MOSFETs will remain off during power-up or fault conditions. The undervoltage lockout circuit for the high-side driver disables the HS OUT pin whenever the V DDH power supply falls below typically 9.0 V, and maintains this condition until the V DDH power supply rises above typically 9.35 V. This guarantees that the high-side MOSFET will be off during power-up or fault conditions. Level Shift The level shift control circuitry of the low-side driver is connected to integrated high-voltage N-channel MOSFET transistors which perform the level- shifting function for communication to the high-side driver. Controlled current capability allows the drain voltage to float with the high-side driver. Two individual channels produce a true differential communication channel for accurately controlling the high-side driver in the presence of fast moving high-voltage waveforms. The high voltage level shift transistors employed exhibit very low output capacitance, minimizing the displacement currents between the low-side and high-side drivers during fast moving voltage transients created during switching of the external MOSFETs. As a result, power dissipation is minimized and noise immunity optimized. The pulse circuit provides the two high- voltage level shifters with precise timing signals. These signals are used by the discriminator to reject spurious noise. The combination of differential communication with the precise timing provides maximum immunity to noise. Simultaneous Conduction Lockout A latch prevents the low-side driver and high-side driver from being on at the same time, regardless of the input signals. Delay Circuit The delay circuit matches the low-side propagation delay with the combination of the pulse circuit, high voltage level shift, and high-side driver propagation delays. This ensures that the low-side driver and high-side driver will never be on at the same time during switching transitions in either direction. Driver The CMOS drive circuitry on both low- side and high-side driver ICs provide drive power to the gates of the external MOSFETs. The drivers consist of a CMOS buffer capable of driving external transistor gates at up to 15 V. |
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