STN851 datasheet(3/10 Pages) STMICROELECTRONICS

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STN851

Electrical characteristics

3/10

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE = 0)

VCB = 120 V

VCB = 120 V Tc = 100

µA

IEBO

Emitter cut-off current

(IC = 0)

VEB = 7 V

V(BR)CBO

Collector-base

breakdown voltage

(IE = 0)

IC = 100 µA

150

V(BR)CEO

(1)

Pulse duration = 300 µs, duty cycle

≤ 1.5%

Collector-emitter

breakdown voltage

(IB = 0)

IC = 10 mA

V(BR)EBO

Emitter-base breakdown

voltage (IC = 0)

IE = 100 µA

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = 100 mA

IB = 5 mA

IC = 1 A_ _

IB = 50 mA

IC = 2 A

IB = 50 mA

IC = 5 A_ _

IB = 200 mA

140

320

120

250

500

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = 4 A_ _

IB = 200 mA

1.15

VBE(on)

(1)

Base-emitter on voltage

IC = 4 A_ _

VCE = 1 V

0.89

hFE

(1)

DC current gain

IC = 10 mA

VCE = 1 V

IC = 2 A_ _

VCE = 1 V

IC = 5 A

VCE = 1 V

IC = 10 A _ VCE = 1 V

150

300

270

140

350

Transition frequency

VCE = 10 V

IC = 100 mA

130MHz

CCBO

Collector-base

capacitance (IE = 0)

VCB = 10 V

f = 1 MHz

ton

Resistive load

Turn-on time

Storage time

Fall time

IC = 1 A

VCC = 10 V

IB1 = -IB2 = 0.1 A

1.35

120

µs

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