TS616IDW datasheet(5/37 Pages) STMICROELECTRONICS

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TS616

Electrical characteristics

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Electrical characteristics

Table 3.

VCC = ±6 V, Rfb= 910 Ω, Tamb = 25° C (unless otherwise specified)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

DC performance

Vio

Input offset voltage

Tamb

13.5

Tmin < Tamb < Tmax

1.6

ΔVio

Differential input offset voltage

Tamb = 25°C

2.5

Iib+

Positive input bias current

Tamb

530

µA

Tmin < Tamb < Tmax

7.2

Iib-

Negative input bias current

Tamb

315

µA

Tmin < Tamb < Tmax

3.1

ZIN+

Input(+) impedance

ZIN-

Input(-) impedance

CIN+

Input(+) capacitance

CMR

Common mode rejection ratio

20 log (

ΔVic/ΔVio)

ΔVic = ±4.5V

Tmin < Tamb < Tmax

SVR

Supply voltage rejection ratio

20 log (

ΔVCC/ΔVio)

ΔVCC = ±2.5V to ±6V

Tmin < Tamb < Tmax

ICC

Total supply current per operator

No load

13.5

Dynamic performance and output characteristics

ROL

Open loop transimpedance

Vout = 7Vp-p, RL = 25Ω

513.5

Tmin < Tamb < Tmax

5.7

-3dB bandwidth

Small signal Vout < 20mVp

AV = 12dB, RL = 25Ω

MHz

Full power bandwidth

Large signal Vout = 3Vp

AV = 12dB, RL = 25Ω

Gain flatness @ 0.1dB

Small signal Tamb<20mVp

AV = 12dB, RL = 25Ω

7MHz

Rise time

Vout = 6Vp-p, AV = 12dB, RL = 25Ω

10.6

Fall time

Vout = 6Vp-p, AV = 12dB, RL = 25Ω

12.2

Settling time

Vout = 6Vp-p, AV= 12dB, RL = 25Ω

Slew rate

Vout = 6Vp-p, AV = 12dB, RL = 25Ω 330

420

V/µs

VOH

High level output voltage

RL = 25Ω connected to GND

4.8

5.05

VOL

Low level output voltage

RL = 25Ω Connected to GND

-5.3

-5.1

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