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TS616IDWT 数据表(PDF) 6 Page - STMicroelectronics |
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TS616IDWT 数据表(HTML) 6 Page - STMicroelectronics |
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6 / 37 page ![]() Electrical characteristics TS616 6/37 Iout Output sink current Vout = -4Vp -320 -490 mA Tmin < Tamb < Tmax -395 Output source current Vout = +4Vp 330 420 Tmin < Tamb < Tmax 370 Noise and distortion eN Equivalent input noise voltage F = 100kHz 2.5 nV/ √Hz iNp Equivalent input noise current (+) F = 100kHz 15 pA/ √Hz iNn Equivalent input noise current (-) F = 100kHz 21 pA/ √Hz HD2 2nd harmonic distortion (differential configuration) Vout = 14Vp-p, AV = 12dB F= 110kHz, RL = 50Ω diff. -87 dBc HD3 3rd harmonic distortion (differential configuration) Vout = 14Vp-p, AV = 12dB F= 110kHz, RL = 50Ω diff. -83 dBc IM2 2nd order intermodulation product (differential configuration) F1= 100kHz, F2 = 110kHz Vout = 16Vp-p, AV = 12dB RL = 50Ω diff. -76 dBc F1= 370kHz, F2 = 400kHz Vout = 16Vp-p, AV = 12dB RL = 50Ω diff. -75 IM3 3rd order intermodulation product (differential configuration) F1 = 100kHz, F2 = 110kHz Vout = 16Vp-p, AV = 12dB RL = 50Ω diff. -88 dBc F1 = 370kHz, F2 = 400kHz Vout = 16Vp-p, AV = 12 B RL = 50Ω diff. -87 Table 3. VCC = ±6 V, Rfb= 910 Ω, Tamb = 25° C (unless otherwise specified) (continued) Symbol Parameter Test conditions Min. Typ. Max. Unit |
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