TSH80IDSLASHDT datasheet(8/27 Pages) STMICROELECTRONICS

8 / 27 page

Electrical characteristics

TSH80, TSH81, TSH82, TSH84

8/27

Doc ID 9413 Rev 5

GBP

Gain bandwidth product

F=10 MHz

AVCL = +11

AVCL = -10

MHz

Bandwidth at -3 dB

AVCL =+1

RL = 150 Ω // 30 pF to GND

100

MHz

Slew rate

AVCL =+2

RL = 150 Ω // CL to GND

CL = 5 pF

CL = 30 pF

117

118

μs

φm

Phase margin

RL = 150 Ω connected to GND

(degree)

Equivalent input noise voltage F = 100 kHz

nV/

√Hz

THD

Total harmonic distortion

AVCL = +2, F = 4 MHz

RL = 150 Ω // 30 pF to GND

Vout = 1 Vpp

Vout = 2 Vpp

-61

-54

IM2

Second order intermodulation

product

AVCL =+2, Vout = 2 Vpp

RL = 150 Ω to GND

Fin1 = 180 kHz, Fin2 = 280 kHz

spurious measurement at 100 kHz

-76

dBc

IM3

Third order intermodulation

product

AVCL = +2, Vout = 2 Vpp

RL = 150 Ω to GND

Fin1 = 180 kHz, Fin2 = 280 kHz

spurious measurement at 400 kHz

-68

dBc

ΔG

Differential gain

AVCL =+2, RL =150 Ω to GND

F=4.5MHz, Vout =2Vpp

0.5

Differential phase

AVCL = +2, RL = 150 Ω to GND

F=4.5MHz, Vout =2Vpp

0.5

(degree)

Gain flatness

F = DC to 6 MHz, AVCL =+2

0.2

Vo1/Vo2

Channel separation

F = 1 MHz to 10 MHz

Table 4.

VCC

+ = +5 V, V

- = -5 V, V

ic = GND, Tamb = 25° C

(unless otherwise specified) (continued)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

TSH80ID/DT 数据表(PDF) 8 Page - STMicroelectronics

TSH80ID/DT 数据表(HTML) 8 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27

数据表下载