数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

MMDF2P02ER2 数据表(PDF) 2 Page - ON Semiconductor

部件名 MMDF2P02ER2
功能描述  Power MOSFET 2 Amps, 25 Volts P?묬hannel SO??, Dual
PDF  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

MMDF2P02ER2 数据表(HTML) 2 Page - ON Semiconductor

  MMDF2P02ER2 Datasheet HTML 1Page - ON Semiconductor MMDF2P02ER2 Datasheet HTML 2Page - ON Semiconductor MMDF2P02ER2 Datasheet HTML 3Page - ON Semiconductor MMDF2P02ER2 Datasheet HTML 4Page - ON Semiconductor MMDF2P02ER2 Datasheet HTML 5Page - ON Semiconductor MMDF2P02ER2 Datasheet HTML 6Page - ON Semiconductor MMDF2P02ER2 Datasheet HTML 7Page - ON Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 7 page
background image
MMDF2P02E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 3)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
25
−
−
2.2
−
−
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
−
−
−
−
1.0
10
mAdc
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
−
−
100
nAdc
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Temperature Coefficient (Negative)
VGS(th)
1.0
−
2.0
3.8
3.0
−
Vdc
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
RDS(on)
−
−
0.19
0.3
0.25
0.4
W
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc)
gFS
1.0
2.8
−
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
−
340
475
pF
Output Capacitance
Coss
−
220
300
Transfer Capacitance
Crss
−
75
150
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 5.0 Vdc, RG = 6.0 W)
td(on)
−
20
40
ns
Rise Time
tr
−
40
80
Turn−Off Delay Time
td(off)
−
53
106
Fall Time
tf
−
41
82
Turn−On Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc, RG = 6.0 W)
td(on)
−
13
26
Rise Time
tr
−
29
58
Turn−Off Delay Time
td(off)
−
30
60
Fall Time
tf
−
28
56
Gate Charge
(VDS = 16 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
QT
−
10
15
nC
Q1
−
1.0
−
Q2
−
3.5
−
Q3
−
3.0
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 4)
(IS = 2.0 Adc, VGS = 0 Vdc)
VSD
−
1.5
2.0
Vdc
Reverse Recovery Time
See Figure 11
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
trr
−
32
64
ns
ta
−
19
−
tb
−
12
−
Reverse Recovery Storage Charge
QRR
−
0.035
−
mC
3. Negative sign for P−Channel device omitted for clarity.
4. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.



Html Pages

1 2 3 4 5 6 7


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com