MMDF2P02HD datasheet(2/8 Pages) ONSEMI

2 / 8 page

MMDF2P02HD

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 3)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

−

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

−

1.0

mAdc

Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

−

100

nAdc

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

(VDS = VGS, ID = 250 mAdc)

Temperature Coefficient (Negative)

VGS(th)

1.0

−

1.5

4.0

2.0

−

Vdc

mV/

°C

Static Drain−to−Source On−Resistance

(VGS = 10 Vdc, ID = 2.0 Adc)

(VGS = 4.5 Vdc, ID = 1.0 Adc)

RDS(on)

−

0.118

0.152

0.160

0.180

Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc)

gFS

2.0

3.0

−

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

−

420

588

Output Capacitance

Coss

−

290

406

Reverse Transfer Capacitance

Crss

−

116

232

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

(VDS = 10 Vdc, ID = 2.0 Adc,

VGS = 4.5 Vdc, RG = 6.0 W)

td(on)

−

Rise Time

−

132

Turn−Off Delay Time

td(off)

−

Fall Time

−

Turn−On Delay Time

(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc, RG = 6.0 W)

td(on)

−

Rise Time

−

Turn−Off Delay Time

td(off)

−

Fall Time

−

Gate Charge

(VDS = 16 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)

−

1.2

−

5.0

−

4.0

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage (Note 4)

(IS = 2.0 Adc, VGS = 0 Vdc)

(IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

−

1.5

1.24

2.1

−

Vdc

Reverse Recovery Time

(VDD = 15 V, IS = 2.0 A,

dIS/dt = 100 A/ms)

trr

−

QRR

−

0.034

−

3. Negative sign for P−Channel device omitted for clarity.

4. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.max.

5. Switching characteristics are independent of operating junction temperature.

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