Rev.

9 | Page 4 of 11 | www.onsemi.com

N02L63W2A

1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional

operation of the device at these or any other conditions above those indicated in the operating section of this specification is not

implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Item

Symbol

Rating

Unit

V

–0.3 to 4.5

V

Power Dissipation

500

mW

Storage Temperature

–40 to 125

Operating Temperature

-40 to +85

Soldering Temperature and Time

Operating Characteristics (Over Specified Temperature Range)

Item

Symbol

Test Conditions

Min.

Max

Unit

Supply Voltage

2.3

3.0

3.6

V

Data Retention Voltage

1.8

3.6

V

Input High Voltage

1.8

V

Input Low Voltage

–0.3

0.6

V

Output High Voltage

V

Output Low Voltage

0.2

V

Input Leakage Current

0.5

µA

Output Leakage Current

0.5

µA

Read/Write Operating Supply Current

@ 1

2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive

output capacitance expected in the actual system.

2.0

4.0

mA

Read/Write Operating Supply Current

12.0

16.0

mA

Page Mode Operating Supply Current

Savings with Page Mode Operation

diagram)

4.0

mA

Read/Write Quiescent Operating Sup-

3. This device assumes a standby mode if the chip is disabled (CE1 high or CE2 low). In order to achieve low standby current all

inputs must be within 0.2 volts of either VCC or VSS.

f = 0

3.0

mA

Chip Disabled

2.0

20.0

µA

10.0

µA