REF5020-EP, REF5025-EP

REF5040-EP, REF5050-EP

SBOS471A – APRIL 2010 – REVISED JUNE 2010

www.ti.com

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

PRODUCT

OUTPUT VOLTAGE

ORDERABLE PART NUMBER

TOP-SIDE MARKING

REF5020MDREP

2.048 V

SOIC-D

REF5020MDREP

5020EP

REF5025MDTEP

2.5 V

SOIC-D

REF5025MDTEP

5025EP

REF5040MDREP

4.096 V

SOIC-D

REF5040MDREP

5040EP

REF5050MDREP

5 V

SOIC-D

REF5050MDREP

5050EP

(1)

For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI

web site at www.ti.com.

(2)

Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at

www.ti.com/sc/package.

ABSOLUTE MAXIMUM RATINGS

(1)

PARAMETER

REF50xx

UNIT

Input Voltage

18

V

Output Short-Circuit

30

mA

Operating Temperature Range

–55 to 125

°C

Storage Temperature Range

–65 to 150

°C

150

°C

Human Body Model (HBM)

3000

V

ESD Rating

Charged Device Model (CDM)

1000

V

(1)

Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may

degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond

those specified is not implied.

2

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Product Folder Link(s): REF5020-EP REF5025-EP REF5040-EP REF5050-EP