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THS7360 数据表(PDF) 2 Page - Texas Instruments

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部件名 THS7360
功能描述  6-Channel Video Amplifier with 3-SD and 3-SD/ED/HD/Full-HD Fiters and High Gain
PDF  43 Pages
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制造商  TI [Texas Instruments]
网页  http://www.ti.com
标志 TI - Texas Instruments

THS7360 数据表(HTML) 2 Page - Texas Instruments

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THS7360
SLOS674 – JUNE 2010
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGE/ORDERING INFORMATION(1)(2)
PRODUCT
PACKAGE-LEAD
TRANSPORT MEDIA, QUANTITY
ECO STATUS(2)
THS7360IPW
Rails, 70
TSSOP-20
Pb-Free, Green
THS7360IPWR
Tape and Reel, 2000
(1)
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or visit the
device product folder at ti.com.
(2)
These packages conform to Lead (Pb)-free and green manufacturing specifications. Additional details including specific material content
can be accessed at www.ti.com/leadfree.
GREEN: TI defines Green to mean Lead (Pb)-Free and in addition, uses less package materials that do not contain halogens, including
bromine (Br), or antimony (Sb) above 0.1% of total product weight. N/A: Not yet available Lead (Pb)-Free; for estimated conversion
dates, go to www.ti.com/leadfree. Pb-FREE: TI defines Lead (Pb)-Free to mean RoHS compatible, including a lead concentration that
does not exceed 0.1% of total product weight, and, if designed to be soldered, suitable for use in specified lead-free soldering
processes.
ABSOLUTE MAXIMUM RATINGS
(1)
Over operating free-air temperature range, unless otherwise noted.
THS7360
UNIT
Supply voltage, VS+ to GND
5.5
V
Input voltage, VI
–0.4 to VS+
V
Output current, IO
±90
mA
Continuous power dissipation
See the Thermal Information Table
Maximum junction temperature, any condition(2), TJ
+150
°C
Maximum junction temperature, continuous operation, long-term reliability(3), TJ
+125
°C
Storage temperature range, Tstg
–60 to +150
°C
Human body model (HBM)
4000
V
ESD rating:
Charge device model (CDM)
1000
V
Machine model (MM)
200
V
(1)
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2)
The absolute maximum junction temperature under any condition is limited by the constraints of the silicon process.
(3)
The absolute maximum junction temperature for continuous operation is limited by the package constraints. Operation above this
temperature may result in reduced reliability and/or lifetime of the device.
THERMAL INFORMATION
THS7360
THERMAL METRIC(1)
PW
UNITS
20 PINS
qJA
Junction-to-ambient thermal resistance
108.0
qJC(top)
Junction-to-case(top) thermal resistance
41.6
qJB
Junction-to-board thermal resistance
61.3
°C/W
yJT
Junction-to-top characterization parameter
2.9
yJB
Junction-to-board characterization parameter
58.4
qJC(bottom)
Junction-to-case(bottom) thermal resistance
n/a
(1)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
2
Submit Documentation Feedback
Copyright © 2010, Texas Instruments Incorporated
Product Folder Link(s): THS7360



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