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EU2DGF 数据表(PDF) 1 Page - Gulf Semiconductor |
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EU2DGF 数据表(HTML) 1 Page - Gulf Semiconductor |
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1 / 2 page ![]() Rev.A5 www.gulfsemi.com EU2BGF THRU EU2JGF SINTERED GLASS JUNCTION ULTRA FAST SWITCHING RECTIFIER VOLTAGE:100 TO 600V CURRENT: 1.0A FEATURE DO-41 High temperature metallurgically bonded construction Sintered glass cavity free junction Capability of meeting environmental standard of MIL-S-19500 High temperature soldering guaranteed 350 °C /10sec/0.375”lead length at 5 lbs tension Operate at Ta =55 °C with no thermal run away Typical Ir<0.2 µA Low power loss, high efficient MECHANICAL DATA Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C Case: Molded with UL-94 Class V-0 recognized Flame Retardant Epoxy Polarity: color band denotes cathode Mounting position: any Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (single-phase, half wave, 60HZ, resistive or inductive load rating at 25 °C, unless otherwise stated) SYMBOL EU2BGF EU2DGF EU2GGF EU2JGF units Maximum Recurrent Peak Reverse Voltage Vrrm 100 200 400 600 V Maximum RMS Voltage Vrms 70 140 280 420 V Maximum DC blocking Voltage Vdc 100 200 400 600 V Maximum Average Forward Rectified Current 3/8”lead length at Ta =55 °C If(av) 1.2 1.0 A Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load Ifsm 30 A Maximum Forward Voltage at rated Forward Current and 25 °C Vf 0.9 (IF=1.2A) 1.4 (IF=1.0A) V Maximum DC Reverse Current Ta =25 °C at rated DC blocking voltage Ta =125 °C Ir 10 50 µA µA Maximum Reverse Recovery Time (Note 1) Trr 50 75 nS Typical Junction Capacitance (Note 2) Cj 17 15 pF Typical Thermal Resistance (Note 3) R(ja) 50 60 °C /W Storage and Operating Temperature Range Tstg, Tj -65 to +175 °C Note: 1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A 2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc 3. Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted |
类似零件编号 - EU2DGF |
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