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BAS21 数据表(PDF) 1 Page - Rectron Semiconductor |
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BAS21 数据表(HTML) 1 Page - Rectron Semiconductor |
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1 / 1 page ![]() 1. ANODE 2. NC 3. CATHODE 3 2 - T O S3 2 - T O S 3 2 - T O S 3 2 - T O S3 2 - T O S (1) (3) (2) (UNITS: mm) RECTRON USA 1315 John Reed Court, Industry, CA 91745 Tel: (626) 333-3802 Fax: (626) 330-6296 www.rectron.com SEMICONDUCTOR TECHNICAL SPECIFICATION BAS21 RECTRON SURFACE MOUNT DIODE Absolute Maximum Ratings (Ta=25 °C) Items Symbol Ratings Unit Reverse Voltage VRRM 200 V Reverse Recovery Time trr 75 ns Forward Voltage @ If = 100 mA VF 1.0 V Forward Current (1) IF 200 mA Junction Temp. Tj -55 to 150 °C Storage Temp. Tstg -55 to 150 °C Mechanical Data Items Materials Package SOT-23 Lead Frame 42 Alloy Lead Finish Solder Plating Bond Wire Au Mold Resin Epoxy Chip Silicon Electrical Characteristics (Ta=25 °C) Ratings Symbol Ratings Unit Repetitive Peak Reverse Voltage ; IR= 100uA (2) VRRM 250 V Repetitive Peak Forward Current IFRM 625 mA Forward Voltage IF= 100mA IF= 200mA VF 1.0 1.25 V Reverse Current VR= 200V VR= 200V (Tj= 150 °C) IR 0.10 100 uA Reverse Recovery Time IF= IR= 10mA; RL= 100 Ω trr 75 ns Thermal Resistance (junction to ambient) R ΘJA 500 °C/W Notes: 1. Mounted on a ceramic substrate of 8mm x 10mm x 0.7mm 2. At zero life time measured under pulse conditions to avoid excessive dissipation and voltage limited to 275V. |
类似零件编号 - BAS21 |
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类似说明 - BAS21 |
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