UD9926

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 5

www.unisonic.com.tw

QW-R502-143.B

PARAMETER

SYMBOL

RATINGS

UNIT

Drain Source Voltage

20

V

Gate Source Voltage

±10

V

Continuous(Note 3)

6

A

Drain Current

Pulsed (Note 2)

20

A

SOP-8

1.6

W

Power Dissipation

TSSOP-8

1.0

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Surface Mounted on 1in

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction to Ambient

80

°C /W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

20

V

Drain-Source Leakage Current

1

uA

Gate-Source Leakage Current

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

0.5

0.7

1.5

V

28

32

mΩ

Drain-Source On-State Resistance (Note2)

38

45

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

520

pF

Output Capacitance

110

pF

Reverse Transfer Capacitance

70

pF

SWITCHING CHARACTERISTICS

Turn-ON Delay Time (Note)

17

ns

Turn-ON Rise Time

15

ns

Turn-OFF Delay Time

45

ns

Turn-OFF Fall Time

25

ns

Total Gate Charge (Note)

10

nC

Gate-Source Charge

3.6

nC

Gate-Drain Charge

2

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage(Note2)

0.6

1.3

V

Maximum Continuous Drain-Source Diode

Forward Current

2.5

A

Note: Pulse width ≤300us, duty cycle ≤2%.