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DB155 数据表(PDF) 1 Page - Rectron Semiconductor |
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DB155 数据表(HTML) 1 Page - Rectron Semiconductor |
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1 / 2 page ![]() SINGLE-PHASE GLASS PASSIVATED VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.5 Ampere RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION FEATURES * Good for automation insertion * Surge overload rating - 60 amperes peak * Ideal for printed circuit board * Reliable low cost construction utilizing molded * Glass passivated device * Polarity symbols molded on body * Mounting position: Any * Weight: 1.0 gram * UL listed the recognized component directory, file #E94233 * Epoxy: Device has UL flammability classification 94V-O MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. DB151 THRU DB157 MAXIMUM RATINGS (At TA = 25 oC unless otherwise noted) ELECTRICAL CHARACTERISTICS (At TA = 25 oC unless otherwise noted) SILICON BRIDGE RECTIFIER Dimensions in inches and (millimeters) DB-1 2002-1 RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Bridge Input Voltage Maximum DC Blocking Voltage Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Operating and Storage Temperature Range SYMBOL VRRM VDC IO IFSM TJ,TSTG VRMS Volts Volts Amps 1.5 60 -65 to + 150 0 C UNITS Maximum Average Forward Output Current at TA = 40 oC 50 200 400 100 600 800 1000 35 140 280 70 420 560 700 Volts Amps DB151 DB153 DB154 DB152 DB155 DB156 DB157 50 200 400 100 600 800 1000 DC Blocking Voltage per element CHARACTERISTICS VF SYMBOL IR UNITS 1.1 0.5 mAmps uAmps Element at 1.5A DC Maximum Forward Voltage Drop per Bridge Volts @TA = 25 oC @TA = 125 oC 5.0 Maximum Forward Voltage Drop per Bridge DB151 DB153 DB154 DB152 DB155 DB156 DB157 .255 (6.5) .300 (7.6) .350 (8.9) .245 (6.2) .335 (8.51) .320 (8.12) .195 (5.0) .205 (5.2) (0.5) (1.5) .020 .060 .135 (3.4) .115 (2.9) .165 (4.2) .155 (3.9) MECHANICAL DATA |
类似零件编号 - DB155 |
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类似说明 - DB155 |
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