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MMST5401 数据表(PDF) 1 Page - Micro Commercial Components |
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MMST5401 数据表(HTML) 1 Page - Micro Commercial Components |
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1 / 2 page ![]() MMST5401 PNP Small Signal Transistors Features • Power dissipation: 200mW (Tamb=25 ) • Collector current: -0.2A • Marking : K4M • Operating and Storage junction temperature range -55 to + 150 Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units OFF CHARACTERISTICS (2) V(BR)CEO Collector-Emitter Breakdown Voltage (IC=-1.0mAdc, IB=0) -150 --- Vdc V(BR)CBO Collector-Base Breakdown Voltage (IC=-100uAdc, IE=0) -160 --- Vdc V(BR)EBO Collector-Emitter Breakdown Voltage (IE=-10uAdc, IC=0) -5.0 --- Vdc ICEO Collector Cutoff Current (VCB=-120Vdc, IE=0Vdc) --- -50 nAdc IEBO Emitter Cutoff Current (VEB=-3Vdc, IC=0Vdc) --- -50 nAdc hFE DC Current Gain (IC=-1mAdc, VCE=-5Vdc) (IC=-10mAdc, VCE=-5Vdc) (IC=-50mAdc, VCE=-5Vdc) 50 60 50 --- 240 --- --- --- --- VCE(sat) Collector-Emitter Saturation Voltage (IC=-10mAdc, IB=-1mAdc) (IC=-50mAdc, IB=-5mAdc) --- --- -0.2 -0.5 Vdc VBE(sat) Base-Emitter Saturation Voltage (IC=-10mAdc, IB=-1mAdc) (IC=-50mAdc, IB=-5mAdc) --- --- -1 -1 Vdc fT Current Gain-Bandwidth Product (VCE=-10Vdc, IC=-10mAdc, f=100MHz) 100 300 MHz Cob Output Capacitance (VCB=-10Vdc, f=1.0MHz, IE=0) --- 6 pF NF Noise Figure (VCE=-5V, IC=-0.2mA, f=-1KHz, Rg=10 ¡) --- 8 dB omponents 20736 Marilla Street Chatsworth !"# $% !"# MCC Revision: 3 2008/01/01 SOT-323 Suggested Solder Pad Layout INCHES MM DIM MIN MAX MIN MAX NOTE A .071 .087 1.80 2.20 B .045 .053 1.15 1.35 C .079 .087 2.00 2.20 D .026 Nominal 0.65Nominal E .047 .055 1.20 1.40 F .012 .016 .30 .40 G .000 .004 .000 .100 H .035 .039 .90 1.00 J .004 .010 .100 .250 K .012 .016 .30 .40 A C B D E F G H J 1.90 0.70 0.90 0.65 0.65 DIMENSIONS K TM Micro Commercial Components E B C www.mccsemi.com 1 of 2 • Case Material:Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1 |
类似零件编号 - MMST5401 |
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类似说明 - MMST5401 |
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