NTJS3157NT2 datasheet(2/6 Pages) ONSEMI

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NTJS3157N

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

VGS = 0 V, ID = 250 mA

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = 16 V

TJ = 25°C

1.0

TJ = 85°C

5.0

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±8.0 V

±100

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

0.40

Negative Threshold Temperature

Coefficient

VGS(TH)/TJ

−4.0

mV/°C

Drain−to−Source On Resistance

RDS(on)

VGS = 4.5 V, ID = 4.0 A

VGS = 2.5 V, ID = 3.6 A

VGS = 1.8 V, ID = 2.0 A

Forward Transconductance

gFS

VGS = 10 V, ID = 3.2 A

9.0

CHARGES AND CAPACITANCES

Input Capacitance

CISS

VGS = 0 V, f = 1.0 MHz,

VDS = 10 V

500

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

Total Gate Charge

QG(TOT)

VGS = 4.5 V, VDS = 10 V,

ID = 3.2 A

6.9

Gate−to−Source Charge

QGS

1.0

Gate−to−Drain Charge

QGD

1.8

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

td(on)

VGS = 4.5 V, VDD = 10 V,

ID = 0.5 A, RG = 6.0 W

6.0

Rise Time

Turn−Off Delay Time

td(off)

Fall Time

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS =0 V,

IS = 1.6 A

TJ = 25°C

0.7

1.0

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 1.6 A

Charge Time

Discharge Time

3.0

Reverse Recovery Charge

QRR

5.0

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

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