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NTMFS4841NHT3G 数据表(PDF) 4 Page - ON Semiconductor

部件名 NTMFS4841NHT3G
功能描述  Power MOSFET 30 V, 59 A, Single N?묬hannel, SO??FL
PDF  7 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

NTMFS4841NHT3G 数据表(HTML) 4 Page - ON Semiconductor

  NTMFS4841NHT3G Datasheet HTML 1Page - ON Semiconductor NTMFS4841NHT3G Datasheet HTML 2Page - ON Semiconductor NTMFS4841NHT3G Datasheet HTML 3Page - ON Semiconductor NTMFS4841NHT3G Datasheet HTML 4Page - ON Semiconductor NTMFS4841NHT3G Datasheet HTML 5Page - ON Semiconductor NTMFS4841NHT3G Datasheet HTML 6Page - ON Semiconductor NTMFS4841NHT3G Datasheet HTML 7Page - ON Semiconductor  
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NTMFS4841NH
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4
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
012
3456
Figure 1. On−Region Characteristics
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS = 3.2 V
3.8 V
4.0 V
4.2 V
4.4 V
3.6 V
3.4 V
TJ = 25°C
4.6 V
4.8 V
5.0 V
7.0 V
10 V
0
10
20
30
40
50
60
70
80
90
12
34
5
6
7
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
TC = 25°C
TC = −55°C
TC = 125°C
0.004
0.005
0.006
0.007
0.008
0.009
0.010
0.011
0.012
0.013
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
11
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
ID = 30 A
TJ = 25°C
0.002
0.0025
0.003
0.0035
0.004
0.0045
0.005
0.0055
0.006
0.0065
0.007
0.0075
0.008
0.0085
0.009
0.0095
0.01
0.0105
0.011
0.0115
0.012
10
15
20
25
30
35
40
45
50
55
VGS = 11.5 V
VGS = 4.5 V
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
TJ = 25°C
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
−55 −35 −15
5
25 45
65 85
145
Figure 5. On−Resistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (°C)
ID = 30 A
VGS = 10 V
105
105
0.1
1
10
100
1000
10000
5
1015
2025
30
Figure 6. Drain−to−Source Leakage Current
versus Voltage
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS = 0 V
TJ = 150°C
TJ = 125°C
TJ = 25°C



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