PACUSB-U1/U2/U3

Rev.2 | Page 4 of 9 | www.onsemi.com

ELECTRICAL OPERATING CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

R1

Resistance R1 (PACUSB-U1 only)

Measured at T

12

15

18

Ω

R1

Resistance R1 (PACUSB-U2 only)

Measured at T

26

33

40

Ω

R1

Resistance R1 (PACUSB-U3 only)

Measured at T

18

22

26

Ω

R2

Resistance R2

Measured at T

1.2

1.5

1.8

k

Ω

C1

Capacitance C1

Measured at 1 MHz, 2.5VDC,

T

38

47

56

pF

I

LEAK

Diode Leakage Current to GND

At 3.3VDC and T

1

100

nA

V

D1

Diode Reverse-biased Stand-off

Voltage

I = 10

μA,T

5.5

V

V

D2

Signal Clamp Voltage

Positive Clamp

Negative Clamp

@ 10mA, T

@ 10mA, T

5.6

-1.2

6.8

-0.8

8.0

-0.4

V

V

V

ESD

In-system ESD Withstand Voltage

Human Body Model, MIL-STD-

883,

Method 3015

IEC 61000-4-2, contact discharge

method (I/O pins)

IEC 61000-4-2, contact discharge

method (V

Note 1

Note 1

Note 1

kV

kV

kV

V

CLAMP

Clamping Voltage during ESD

Discharge

Positive

Negative

MIL-STD-883, Method 3015, 8kV;

Note 1

10

-5

V

V

Note 1: ESD applied to input/output/V

side of the EMI filter to the ESD pin (i.e., if ESD is applied to pin 1, then clamping voltage is measured at pin 6). Unused

pins are open.