PACUSBVBD1/D2/D3

Rev. 2 | Page 4 of 9 | www.onsemi.com

ELECTRICAL OPERATING CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

R1

Resistance of R1 Resistor

(PACUSBVB-D2Y6/Y6R)

T

12

15

18

Ω

R1

Resistance of R1 Resistor

(PACUSBVB-D3Y6/Y6R)

T

17.6

22

26.4

Ω

R1

Resistance of R1 Resistor

(PACUSBVB-D1Y6/Y6R)

T

26.4

33

39.6

Ω

R2

Resistance of R2 Resistor

T

15

k

Ω

TCR

Temperature Coefficient of

Resistance

+1300

ppm/°

C

0 VDC; 30 mVAC; 1MHz; 25°C

37.6

47

56.4

pF

C1

Capacitance of C1 Capacitor

2.5 VDC; 30 mVAC; 1MHz; 25°C

25.6

32

38.4

pF

TOL

CM

Matching Tolerance of C1

Capacitors

1MHz; 25°C

+2

%

I

LEAK

Diode Leakage Current to GND

Measured at 3.3 VDC, 25°C

1

100

nA

V

RB

Diode Reverse Bias Voltage

I

5.5

V

V

SIG

Signal Voltage:

Positive Clamp

Negative Clamp

I

I

5.6

-0.4

6.8

-0.8

9.0

-1.5

V

V

V

ESD

In-system ESD Withstand Voltage

MIL-STD-883D, Method 3015

(HBM)

IEC 61000-4-2 Contact

Discharge

Pins 1, 3; Notes 1 and 2

Pins 4, 5; Note 1

Pins 4, 5; Note 1

kV

kV

kV

MIL-STD-883D, Method 3015

+8kV; Note 3

12

V

V

CL

Clamping voltage under ESD

discharge

MIL-STD-883D, Method 3015 -8kV;

Note 3

-7

V

Note 1: ESD voltage applied to pins with respect to GND, one at a time; unused pins are left open.

Note 2: Pins 1 and 3 are not connected to the USB port connector, and therefore are not exposed to external ESD hazards.

Thus, they do not require the high ESD protection levels provided for pins 4, 5, and 6.

Note 3: ESD Clamping Voltage is measured at the opposite end of R1 from the pin to which the ESD discharge is applied (e.g., if

ESD is applied to pin 6, then the clamping voltage is measured at pin 1).