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TFMBJ 数据表(PDF) 1 Page - Rectron Semiconductor |
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TFMBJ 数据表(HTML) 1 Page - Rectron Semiconductor |
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1 / 4 page ![]() RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION FEATURES * Plastic package has underwriters laboratory * Glass passivated chip construction * 600 watt surage capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 oC ambient temperature unless otherwise specified. TVS TFMBJ SERIES DO-214AA 600 WATT PEAK POWER 1.0 WATT STEADY STATE GPP TRANSIENT VOLTAGE SUPPRESSOR Dimensions in inches and (millimeters) MAXIMUM RATINGS (At TA = 25 oC unless otherwise noted) DEVICES FOR BIPOLAR APPLICATIONS For Bidirectional use C or CA suffix for types TFMBJ5.0 thru TFMBJ170 Electrical characteristics apply in both direction 1998-8 Ratings at 25 oC ambient temperature unless otherwise specified. 3. Lead temperature at TL = 25 oC NOTES : 2. Mounted on 0.2 X 0.2”( 5.0 X 5.0mm ) copper pad to each terminal. 1. Non-repetitive current pulse, per Fig.3 and derated above TA = 25 oC per Fig.2. 4. Measured on 8.3mS single half sine-wave duty cycle = 4 pules per minute maximum. 5. VF = 3.5V on TFMBJ-5.0 thru TFMBJ-90 devices and VF = 5.0V on TFMBJ-100 thru TFMBJ-170 devices. RATINGS Steady State Power Dissipation at TL = 75 oC (Note 2) Peak Pulse Current with a 10/1000uS waveform ( Note 1, Fig.3 ) Maximum Instantaneous Forward Voltage at 50A for unidirectional only (Note 3,4) SYMBOL IFSM VF TJ, TSTG Volts -55 to + 150 0 C UNITS Amps Peak Power Dissipation with a 10/1000uS (Note 1,2, Fig.1) Minimum 600 100 SEE NOTE 4 VALUE Operating and Storage Temperature Range PPPM Watts IPPM Amps SEE TABLE 1 Peak Forward Surge Current 8.3mS single half sine-wave superimposed on rated load (JEDEC method) (Note 2,3) unidirectional only PM(AV) 5.0 Watts Back |
类似零件编号 - TFMBJ |
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类似说明 - TFMBJ |
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