RF2045PCBA datasheet(2/6 Pages) RFMD

2 / 6 page

Preliminary

4-14

RF2045

Rev A5 010110

Absolute Maximum Ratings

Parameter

Rating

Unit

Supply Current

120

Input RF Power

+20

dBm

Operating Ambient Temperature

-40 to +85

°C

Storage Temperature

-60 to +150

°C

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Overall

T=25 °C, ICC=65mA

Frequency Range

DC to 6000

MHz

3dB Bandwidth

GHz

Gain

13.8

Freq= 100MHz

13.7

Freq= 1000MHz

13.6

Freq=2000MHz

13.4

Freq= 3000MHz

Freq= 4000MHz

Gain Flatness

±0.2

100MHz to 2000MHz

Noise Figure

5.0

Freq= 1000MHz

Input VSWR

1.7:1

In a 50

Ω system, DC to 4000MHz

Output VSWR

1.7:1

In a 50

Ω system, DC to 4000MHz

Output IP3

+33

dBm

Freq=1000MHz±50kHz, PTONE=-10dBm

Output P1dB

+17.8

dBm

Freq=1000MHz

Reverse Isolation

18.4

Freq=2000MHz

Thermal

ICC=65mA, PDISS=310mW

ThetaJC

173

°C/W

Maximum junction temperature

142

°C

Mean Time Between Failures

1.5x103

years

TAMB=+85°C

Mean Time Between Failures

3.7x105

years

TAMB=+25°C

Mean Time Between Failures

2.0x109

years

TAMB=-40°C

Power Supply

With 22

Ω bias resistor

Device Operating Voltage

4.6

5.0

5.6

At pin 3 with ICC=65mA

Operating Current

Caution! ESD sensitive device.

RF Micro Devices believes the furnished information is correct and accurate

at the time of this printing. However, RF Micro Devices reserves the right to

make changes to its products without notice. RF Micro Devices does not

assume responsibility for the use of the described product(s).

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