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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
2
3
4
5
13
12
11
10
VCC3
VCC1
GND
PD
RF OUT
GND
RF OUT
RF OUT
6
789
114
15
16
BIAS
CIRCUIT
RF2105L
HIGH POWER LINEAR UHF AMPLIFIER
• 900 MHz ISM Band Applications
• 400 MHz Industrial Radios
• Digital Communication Systems
• Driver Stage for Higher Power Applications
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
The RF2105L is a high power, high efficiency linear
amplifierIC. The deviceis manufacturedonanadvanced
Gallium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in digital cellular phone transmitters or ISM
applications requiring linear amplification. It is packaged
in a 16-lead ceramic package with a backside ground.
The device is self-contained with the exception of the out-
put matching network and power supply feed line.
• Single 2.7V to 6.5V Supply
• Upto1.2WCWOutputPower
• 33dB Small Signal Gain
• 48% Efficiency
• Digitally Controlled Power Down Mode
• Small Package Outline (0.25" x 0.25")
RF2105L
High Power Linear UHF Amplifier
RF2105L PCBA
Fully Assembled Evaluation Board
2
Rev B3 010720
0.150
0.050
0.033
0.017
0.025
1
R0.008
0.050
0.075
0.065
0.080
0.080
0.258
0.242
0.258
0.242
0.022
0.018
0.208
0.192
sq.
Package Style: QLCC-16 Alumina
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