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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
2
3
4
5
13
12
11
10
VCC3
VCC1
GND
PD
RF OUT
GND
RF OUT
RF OUT
6789
114
15
16
BIAS
CIRCUIT
GAIN CONTROL
RF2115L
HIGH POWER UHF AMPLIFIER
• Analog Communication Systems
• Analog Cellular Systems (AMPS & TACS)
• 900MHz Spread-Spectrum Systems
• 400MHz Industrial Radios
• Driver Stage for Higher Power Applications
• Portable Battery-Powered Equipment
The RF2115L is a high power amplifier IC. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in analog cellu-
lar phone transmitters or ISM applications operating at
915MHz. The device is packaged in a 16-lead ceramic
quad leadless chip carrier with a backside ground. The
device is self-contained with the exception of the output
matching network and power supply feed line. A two-bit
digital control provides 4 levels of power control, in 10 dB
steps.
• Single 5V to 6.5V Supply
• Upto1.0WCWOutputPower
• 33dB Small Signal Gain
• 48% Efficiency
• Digitally Controlled Output Power
• Small Package Outline (0.25" x 0.25")
RF2115L
High Power UHF Amplifier
RF2115L PCBA
Fully Assembled Evaluation Board
2
Rev B1 010329
1
.258
.242
.258
.242
R.008
.022
.018
.025
.033
.017
.098
.098
.150
.050
.075
.065
.050
Package Style: QLCC-16
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