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2
Preliminary
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
Bias
Circuits
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VREG
VCC1
LTUNE
Q1C
GND
RFIN
NC
VPD
NC
NC
RFOUT
RFOUT
RFOUT
NC
NC
NC
RF2117
• 3.6V Analog Handsets
• Analog Communication Systems
• 400MHz Industrial Radios
• Portable Battery Powered Equipment
The RF2117 is a high power amplifier IC. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in analog cellu-
lar phone transmitters between 400 MHz and 500 MHz or
ISM applications operating at 433MHz. The device is
packaged in a low cost 16-lead plastic package with a
metal backside. The device is self-contained with the
exception of the output matching network and power sup-
ply feed line.
• Single 3V to 5.5V Supply
• Up to 2W CW Output Power
• 33dB Small Signal Gain
• >50% Efficiency
• 400MHz to 500MHz Operation
RF2117
High Efficiency 400MHz Amplifier
RF2117 PCBA
Fully Assembled Evaluation Board
Rev A0 991201
.065
.055
.393
.386
.244
.230
.035
.016
8°MAX
5°MIN
.0098
.0075
.158
.152
.021
.015
.050
1
.004
.000
EXPOSED
HEATSINK
.287
.271
.087
.071
Package Weight
typically 0.22 grams
!"
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