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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
8
7
6
5
RF IN
RF IN
PC
VCC
RF OUT
RF OUT
RF OUT
RF OUT
BIAS
CIRCUIT
PACKAGE BASE
GND
RF2125P
HIGH POWER LINEAR AMPLIFIER
• PCS Communication Systems
• Digital Communication Systems
• DECT Cordless Applications
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
The RF2125P is a high power, high efficiency linear
amplifierIC. The deviceis manufacturedonanadvanced
Gallium Arsenide Heterojunction Bipolar Transistor (HBT)
process and has been designed for use as the final RF
amplifier in digital PCS phone transmitters and base sta-
tions requiring linear amplification operating between
1500 MHz and 2200 MHz. It will also function as a high
efficiency amplifier for constant envelope applications
such as DECT. The device is packaged in an 8-lead plas-
tic package with a backside ground. The device is self-
contained with the exception of the output matching net-
work and power supply feed line. It produces a typical
output power level of 1 W.
• Single 2.7V to 7.5V Supply
• 1W Output Power
•14dB Gain
• 45% Efficiency
• Power Down Mode
• 1500MHz to 2200MHz Operation
RF2125P
High Power Linear Amplifier
RF2125P PCBA
Fully Assembled Evaluation Board
2
Rev A4 010720
3.90
±0.10
6.00
±0.20
4.90
±0.10
0.43
±0.05
1.27
1.40
±0.10
0.05
±0.05
-A-
Exposed
Heat Sink
2.70
±0.10
0.22
±0.03
0.60
±0.15
8° MAX
0° MIN
1.70
±0.10
Dimensions in mm.
NOTES:
1. Shaded lead is pin 1.
2. Lead coplanarity - 0.10 with respect to datum "A".
Package Style: SOIC-8 Slug
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