ü
2-85
2
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
8
7
6
5
VCC2
GND1
PD
RF IN
VCC1
RF OUT
RF OUT
GND 2
BIAS
CIRCUITS
PACKAGE BASE
GND
RF2128
MEDIUM POWER LINEAR AMPLIFIER
• PCS Communication Systems
• 2.5GHz ISM Band Applications
•Wireless LANs
• Commercial and Consumer Systems
• Portable Battery Powered Equipment
The RF2128 is a medium-power, high-efficiency, linear
amplifierIC. The deviceis manufacturedonanadvanced
Gallium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in 2.45 GHz ISM applications such as WLAN
and POS terminals. The part also will function as the final
stage in digital PCS phone transmitters requiring linear
amplification
operating
between
1900MHz
and
2200 MHz, with over 100 mW transmitted power, or as the
driver stage for the RF2125 high power amplifier. A sim-
ple power down function is included for TDD operation.
• Single 3.0V to 6.5V Supply
• 100mW Linear Output Power
• 25dB Small Signal Gain
• 30% Efficiency
• Digitally Controlled Power Down Mode
• 1900MHz to 2500MHz Operation
RF2128
Medium Power Linear Amplifier
RF2128 PCBA
Fully Assembled Evaluation Board
2
Rev A3 010112
.315
.305
.180 SQ MAX
.017
.013
.050
.006
.004
4°MAX
0°MIN
.017
.013
.057 MAX
.004
.000
1
.166
SQ
Metal lid and base, gold plated
Package Style: SOP-8-C
Chinese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
