2-89
2
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
8
7
6
5
VCC2
GND1
PD
RF IN
VCC1
RF OUT
RF OUT
GND 2
BIAS
CIRCUITS
PACKAGE BASE
GND
RF2128P
• PCS Communication Systems
• 2.5GHz ISM Band Applications
• Wireless LANs
• Commercial and Consumer Systems
• Portable Battery Powered Equipment
The RF2128P is a medium-power, high-efficiency, linear
amplifier IC. The device is manufactured on an advanced
Gallium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in 2.45 GHz ISM applications such as WLAN
and POS terminals. The part also will function as the final
stage in digital PCS phone transmitters requiring linear
amplification
operating
between
1900 MHz
and
2200 MHz, with over 100 mW transmitted power, or as the
driver stage for the RF2125 high power amplifier. A sim-
ple power down function is included for TDD operation.
The part is packaged in a low-cost plastic package with a
metal backside.
• Single 3.0V to 6.5V Supply
• 100mW Linear Output Power
• 28dB Small Signal Gain
• 33% Efficiency
• Digitally Controlled Power Down Mode
• 1900MHz to 2500MHz Operation
RF2128P
Medium Power Linear Amplifier
RF2128P PCBA
Fully Assembled Evaluation Board
Rev A4 990216
.157
.150
.035
.016
8°MAX
0°MIN
.061
.055
.196
.189
.244
.230
.050
.010
.007
.003
.001
.019
.014
1
EXPOSED
HEATSINK
.087
.071
.123
.107
Refer to “Handling of PSOP and PSSOP Products” on page 16-15
for special handling information.
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