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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
8
7
6
5
VCC2
VCC2
NC
RF IN
VCC1
RF OUT
RF OUT
PC
BIAS
CIRCUITS
PACKAGE BASE
GND
RF2129
3V, 2.5GHZ LINEAR POWER AMPLIFIER
• 2.5GHz ISM Band Applications
• PCS Communication Systems
• Wireless LAN Systems
• Commercial and Consumer Systems
• Portable Battery Powered Equipment
• Broadband Spread Spectrum Systems
The RF2129 is a linear, medium power, high efficiency
amplifier IC designed specifically for low voltage opera-
tion. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as the final RF
amplifier in 2.5GHz spread spectrum transmitters. The
device is packaged in an 8-lead plastic package with a
backside ground and is self-contained with the exception
of the output matching network and power supply feed
line.
• Single 3.3V Power Supply
• +26dBm Saturated Output Power
• 27dB Small Signal Gain
• High Power Added Efficiency
• Power Down Mode
• 1800MHz to 2500MHz Frequency Range
RF2129
3V, 2.5GHz Linear Power Amplifier
RF2129 PCBA
Fully Assembled Evaluation Board
2
Rev B4 000323
.157
.150
.035
.016
8°MAX
0°MIN
.061
.055
.196
.189
.244
.230
.050
.010
.007
.010
.004
.019
.014
1
EXPOSED
HEATSINK
.087
.071
.123
.107
Refer to “Handling of PSOP and PSSOP Products” on page 16-15
for special handling information.
Package Style: PSOP-8
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