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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
PC
NC
VCC2
GND
GND
GND1
RF IN
VCC1
NC
RF OUT
RF OUT
GND
GND
RF OUT
RF OUT
NC
BIAS
RF2131
HIGH EFFICIENCY AMPS/ETACS AMPLIFIER
• AMPS/ETACS Cellular Handsets
• CDPD Portable Data Cards
• 900MHz ISM Band Equipment
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
The RF2131 is a high-power, high-efficiency amplifier IC.
The device is manufactured on an advanced Gallium Ars-
enide Heterojunction Bipolar Transistor (HBT) process,
and has been designed for use as the final RF amplifier in
AMPS and ETACS handheld equipment, spread spec-
trum systems, CDPD, and other applications in the
800MHz to 950MHz band. On-board power control pro-
vides over 30dB of control range with an analog voltage
input, and provides power down with a logic "low" for
standby operation. Although it is intended for class C
operation, linear class AB operation can be achieved by
raising the bias level. The device is self-contained with
50
Ω input and the output can be easily matched to obtain
optimum power and efficiency characteristics.
• Single 4.0V to 7.0V Supply
• 1.2W Output Power
• 25dB Gain With Analog Gain Control
• 64% Efficiency
• Digitally Controlled Power Down Mode
• 800MHz to 950MHz Operation
RF2131
High Efficiency AMPS/ETACS Amplifier
RF2131 PCBA
Fully Assembled Evaluation Board
2
Rev B4 010417
0.035
0.016
0.010
0.008
8° MAX
0° MIN
0.021
0.014
0.392
0.386
0.158
0.150
0.244
0.230
0.069
0.064
0.050
0.060
0.054
-A-
0.009
0.004
Package Style: Standard Batwing
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