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2-115
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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
8
7
6
5
VCC
RF IN
GND
PC
RF OUT
RF OUT
RF OUT
RF OUT
BIAS
PACKAGE BASE
GND
RF2137
LINEAR POWER AMPLIFIER
• 4.8V AMPS Cellular Handsets
• 4.8V CDMA/AMPS Handsets
• 4.8V JCDMA/TACS Handsets
• Driver Amplifier in Cellular Base Stations
• Portable Battery-Powered Equipment
The RF2137 is a high power, high efficiency linear ampli-
fier IC. The device is manufactured on an advanced Gal-
lium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in dual-mode 4-cell CDMA/AMPS hand-held
digital cellular equipment, spread spectrum systems, and
other applications in the 800MHz to 950MHz band. The
device is self-contained with 50
Ω input and the output
can be easily matched to obtain optimum power, effi-
ciency, and linearity characteristics at all recommended
supply voltages.
• Single 4.2V to 6.0V Supply
• Upto29dBm Linear Output Power
• 27dB Gain With Analog Gain Control
• 45% Linear Efficiency
• On-board Power Down Mode
• 800MHz to 950MHz Operation
RF2137
Linear Power Amplifier
RF2137 PCBA
Fully Assembled Evaluation Board
2
Rev B2 010720
3.90
±0.10
6.00
±0.20
4.90
±0.10
0.43
±0.05
1.27
1.40
±0.10
0.05
±0.05
-A-
Exposed
Heat Sink
2.70
±0.10
0.22
±0.03
0.60
±0.15
8° MAX
0° MIN
1.70
±0.10
Dimensions in mm.
NOTES:
1. Shaded lead is pin 1.
2. Lead coplanarity - 0.10 with respect to datum "A".
Package Style: SOIC-8 Slug
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