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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
5
13
12
11
10
9
GND2
RF IN
GND1
RF OUT
RF OUT
RF OUT
678
16
14
15
RF2138
3V GSM POWER AMPLIFIER
• 3V GSM Cellular Handsets
• 3V Dual-Band/Triple-Band Handsets
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
•GPRS Compatible
The RF2138 is a high power, high efficiency power ampli-
fier module offering high performance in GSM or GPRS
applications. The device is manufactured on an advanced
GaAs HBT process, and has been designed for use as
the final RF amplifier in GSM hand held-digital cellular
equipment and other applications in the 800 MHz to
950MHz band. On-board power control provides over
70dB of control range with an analog voltage input, and
provides power down with a logic “low” for standby opera-
tion. The device is self-contained with 50
Ω input and the
output can be easily matched to obtain optimum power
and efficiency characteristics. The RF2138 can be used
together with the RF2140 for dual-band operation. The
device is packaged in an ultra-small ceramic package,
minimizing the required board space.
• Single 2.7V to 4.8V Supply Voltage
• +36dBm Output Power at 3.5V
• 32dBGainwithAnalogGainControl
• 58% Efficiency
• 800MHz to 950MHz Operation
• Supports GSM and E-GSM
RF2138
3V GSM Power Amplifier
RF2138 PCBA
Fully Assembled Evaluation Board
2
Rev A9 011031
ALL SOLDER PAD TOLERANCES P0.05mm
1
4.20
3.95
sq.
3.50
3.35
sq.
0.38
1.50
1.20
2.00
0.28
0.13
0.80
1.50
sq.
0.40
sq.
Package Style: MP16K01A
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