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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
5
13
12
11
10
9
AT_EN
RF IN
GND1
RF OUT
RF OUT
RF OUT
678
16
14
15
RF2140
3V DCS POWER AMPLIFIER
• 3V DCS1800 (PCN) Cellular Handsets
• 3V DCS1900 (PCS) Cellular Handsets
• 3V Dual-Band/Triple-Band Handsets
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
•GPRS Compatible
The RF2140 is a high power, high efficiency power ampli-
fier module offering high performance in GSM or GPRS
applications. The device is manufactured on an advanced
GaAs HBT process, and has been designed for use as
the final RF amplifier in DCS1800/1900 hand held-digital
cellular
equipment
and
other
applications
in
the
1700 MHz to 2000MHz band. On-board power control
provides over 65dB of control range with an analog volt-
age input, and provides power down with a logic “low” for
standby operation. The device is self-contained with 50
Ω
input and the output can be easily matched to obtain opti-
mum power and efficiency characteristics.The RF2140
can be used together with the RF2138 for dual-band
operation. The device is packaged in an ultra-small
ceramic package, minimizing the required board space.
• Single 2.7V to 4.8V Supply Voltage
• +33dBm Output Power at 3.5V
• 27dBGainwithAnalogGainControl
• 51% Efficiency
• 1700MHz to 1950MHz Operation
• Supports DCS1800 and PCS1900
RF2140
3V DCS Power Amplifier
RF2140 PCBA
Fully Assembled Evaluation Board
2
Rev A12 011031
ALL SOLDER PAD TOLERANCES P0.05mm
1
4.20
3.95
sq.
3.50
3.35
sq.
0.38
1.50
1.20
2.00
0.28
0.13
0.80
1.50
sq.
0.40
sq.
Package Style: MP16K01A
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