ü
2-141
2
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
PC
GND
GND
VCC1
RF IN
GND
GND
NC
NC
GND
GND
RF OUT
RF OUT
GND
GND
NC
RF2145
DCS1800/1900 POWER AMPLIFIER
• 4.8V DCS1800/1900 Handsets
• 3V DECT Handsets and Base Stations
• Commercial and Consumer Systems
• Portable Battery Powered Equipment
TheRF2145 is ahighpower,highefficiency amplifier IC.
The device is manufactured on an advanced Gallium Ars-
enide Heterojunction Bipolar Transistor (HBT) process,
and has been designed for use as the final RF amplifier in
a 4-cell DCS1800 or DCS1900 handset. The device is
packaged in a 16-lead plastic package with wide ground
leads, and is self-contained with the exception of the out-
put matching network and power supply feed line. Only a
single positive voltage is required to operate with full
power and efficiency, and on-board power control and
power-down functions are provided.
• Single 4.8V Power Supply
• +32dBm Output Power
• 28dB Small Signal Gain
• 55% Power Added Efficiency
• Power Control
• 1700MHz to 1900MHz Frequency Range
RF2145
DCS1800/1900 Power Amplifier
RF2145 PCBA
Fully Assembled Evaluation Board
2
Rev B5 010329
.059
.054
.050
.392
.386
.035
.016
.244
.230
8°MAX
0°MIN
.010
.008
.158
.150
.069
.064
1
.009
.004
.020
.014
Package Style: SOP-16 QBW1
Chinese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
