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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VCC
LTUNE
NC
VCC1
GND1
RF IN
VPD
VPD
MODE
NC
RF OUT
RF OUT
RF OUT
NC
NC
NC
BIAS
CIRCUITS
PACKAGE BASE
GND
RF2152
DUAL-MODE CDMA/AMPS OR TDMA/AMPS
3V POWER AMPLIFIER
• 3V CDMA/AMPS Cellular Handsets
• 3V JCDMA/TACS Cellular Handsets
• 3V TDMA/AMPS Cellular Handsets
• Spread-Spectrum Systems
• CDPD Portable Data Cards
• Portable Battery-Powered Equipment
The RF2152 is a high-power, high-efficiency linear ampli-
fier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in dual-mode
3 V CDMA/AMPS handheld digital cellular equipment,
spread-spectrum systems, and other applications in the
800MHz to 950MHz band. The device is self-contained
with 50
Ω input and the output can be easily matched to
obtain optimum power, efficiency, and linearity character-
istics. The package is a PSSOP-16 with backside ground.
• Single 3V Supply
• 28dBm Linear Output Power
• 30dB Linear Gain
• 35% Linear Efficiency
• On-board Power Down Mode
• 800MHz to 960MHz Operation
RF2152
Dual-Mode CDMA/AMPS or TDMA/AMPS 3V Power
Amplifier
RF2152 PCBA-N Fully Assembled Evaluation Board 824-849MHz
RF2152 PCBA-J
Fully Assembled Evaluation Board 877-924MHz
2
Rev A8 001109
.059
.051
.197
.189
.244
.228
.030
.018
8 °MAX
0°MIN
.009
.008
.157
.150
.012
.008
1
EXPOSED
HEATSINK
.003
.001
.025
.062
.070
.102
.110
Refer to “Handling of PSOP and PSSOP Products” on page 16-15
for special handling information.
Package Style: PSSOP-16