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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
NC
VCC1
VCC2
GND
GND
GND1
RF IN
PD
G16
G8
RF OUT
GND
GND
RF OUT
NC
NC
RF2155
3V PROGRAMMABLE GAIN POWER AMPLIFIER
• Analog Communication Systems
• 900MHz Spread Spectrum Systems
• 400MHz Industrial Radios
• Driver Stage for Higher Power Applications
• 3V Applications
The RF2155 is a 3 V medium power programmable gain
amplifierIC. The deviceis manufacturedonanadvanced
Gallium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in analog cellular phone transmitters or ISM
applications operating at 915MHz. The device is self-con-
tained with the exception of the output matching network
and power supply feed line. A two-bit digital control pro-
vides 4 levels of power control, in 8dB steps.
• Single 3V Supply
• 500mW CW Output Power
• 31dB Small Signal Gain
• Up to 60% Efficiency
• Digitally Controlled Output Power
• 430MHz to 930MHz Frequency Range
RF2155
3V Programmable Gain Power Amplifier
RF2155 PCBA
Fully Assembled Evaluation Board
2
Rev B3 010417
0.035
0.016
0.010
0.008
8° MAX
0° MIN
0.021
0.014
0.392
0.386
0.158
0.150
0.244
0.230
0.069
0.064
0.050
0.060
0.054
-A-
0.009
0.004
Package Style: Standard Batwing
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