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Preliminary
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
5
13
12
11
10
9
GND2
VCC1
RFIN
RF OUT
RF OUT
RF OUT
678
16
14
15
RF2161
3V W-CDMA POWER 1900MHZ
3V LINEAR POWER AMPLIFIER
• 3V 1850-1910 CDMA-2000 Handsets
• 3V 1920-1980 W-CDMA Handsets
• Spread Spectrum Systems
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
The RF2161 is a high-power, high-efficiency linear ampli-
fier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in 3V
CDMA-2000 and W-CDMA handsets, spread spectrum
systems, and other applications in the 1920 MHz to
1980 MHz band. The device is self-contained with 50
Ω
input and the output can be easily matched to obtain opti-
mum power, efficiency, and linearity characteristics over
all recommended supply voltages.
• Single 3V Supply
• 27dBm Linear Output Power
• 30dB Linear Gain
• 35% Linear Efficiency
• On-board Power Down Mode
RF2161
3V W-CDMA Power 1900MHZ 3V Linear Power
Amplifier
RF2161 PCBA
Fully Assembled Evaluation Board
2
Rev A3 010514
ALL SOLDER PAD TOLERANCES P0.05mm
1.50 sq.
2.00
0.28
0.13
0.80
0.40
sq.
0.38
1.50
1.20
4.20
3.95
3.50
3.35
4.20
3.95
3.50
3.35
1
Package Style: MP16KO1A
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