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Preliminary
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
Bias
15
11
10
9
7
RF OUT
12
RF OUT
13
RF OUT
14
VBIAS
16
VREG
8
RF IN
6
GND1
5
Q1C
4
3
VCC
1
2
LTUNE
NC
RF2175
3V 400MHZ LINEAR AMPLIFIER
• 3V TETRA Cellular Handsets
• 3V CDMA Cellular Handsets
• Portable Battery-Powered Equipment
The RF2175 is a high-power, high-efficiency linear ampli-
fier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in TETRA
hand-held digital cellular equipment, spread-spectrum
systems, and other applications in the 380MHz to
512MHz band. The RF2175 has an analog bias control
voltagetomaximize efficiency. Thedeviceis self-con-
tained with 50
Ω input, and the output can be easily
matched to obtain optimum power, efficiency, and linear-
ity characteristics. The package is a small SSOP-16 plas-
tic with backside ground.
• Single 3V Supply
• 31.8dBm Linear Output Power
• 37.5dB Linear Gain
• 30% Linear Efficiency
• On-Board Power Down Mode
• 380MHz to 512MHz Operation
RF2175
3V 400MHz Linear Amplifier
RF2175 PCBA
Fully Assembled Evaluation Board
2
Rev A6 010718
EXPOSED HEATSINK
0.154
0.012
0.008
0.025
0.063
0.057
Exposed Heat
Sink
0.087
0.071
0.123
0.107
0.004
0.002 Note 3
-A-
0.196
0.189
0.035
0.016
8° MAX
0° MIN
0.010
0.007
0.237
NOTES:
1. Shaded lead in Pin 1.
2. Lead coplanarity - 0.003 with respect to datum "A".
3. Lead standoff is specified from the lowest point on the
package underside.
Package Style: SSOP-16 Slug
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