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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
8
7
6
5
RF IN
GND
GND
GND
RF OUT
GND
GND
GND
RF2306
GENERAL PURPOSE AMPLIFIER
• Broadband, Low Noise Gain Blocks
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
• Final PA for Low Power Applications
• Portable Battery Powered Equipment
• Broadband Test Equipment
The RF2306 is a general purpose, low cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as an easily-cas-
cadable 50
Ω gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 2000MHz.
The device is self-contained with 50
Ω input and output
impedances and requires only two external DC biasing
elements to operate as specified.
• DC to 2000MHz Operation
• Internally matched Input and Output
• 20dB Small Signal Gain
• 3.5dB Noise Figure
• 10mW Linear Output Power
• Single Positive Power Supply
RF2306
General Purpose Amplifier
RF2306 PCBA
Fully Assembled Evaluation Board
4
Rev B2 000228
.156
.152
.022
.018
5°
.056
.052
.195
.191
.240
.232
.050
.008
.004
MIN
.017
1
Package Style: SOP-8
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