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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
8
7
6
5
VCC
GND
GND
RF IN
RF OUT
GND
GND
GND
RF2310
WIDEBAND GENERAL PURPOSE AMPLIFIER
• General Purpose High Bandwidth Gain
Blocks
• IF or RF Buffer Amplifiers
• Broadband Test Equipment
• Final PA for Medium Power Applications
• Driver Stage for Power Amplifiers
The RF2310 is a general purpose, low-cost, high linearity
RF amplifier IC. The device is manufactured on an
advanced Gallium Arsenide Heterojunction Bipolar Tran-
sistor (HBT) process, and has been designed for use as
an easily cascadable 50
Ω gain block. Applications
include IF and RF amplification in wireless voice and data
communication products operating in frequency bands up
to 2500 MHz. The gain flatness over a very wide band-
width makes the device suitable for many applications.
The device is self-contained with 50
Ω input and output
impedances and requires only two external DC biasing
elements to operate as specified.
• DC to well over 2500MHz Operation
• Internally Matched Input and Output
• 15dB Small Signal Gain
• 5dB Noise Figure
• +19dBm Output Power
• Single 3.5V to 6V Positive Power Supply
RF2310
Wideband General Purpose Amplifier
RF2310 PCBA
Fully Assembled Evaluation Board
4
Rev C5 010717
0.244
0.229
0.157
0.150
0.018
0.014
0.050
0.068
0.053
NOTES:
1. Shaded lead is Pin 1.
2. All dimensions are excluding
mold flash.
3. Lead coplanarity -
0.005 with respect to datum "A".
Dimensions in mm
0.196
0.189
0.008
0.004
-A-
8° MAX
0° MIN
0.034
0.016
0.009
0.007
Package Style: SOIC-8
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