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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
8
7
6
5
VCC
GND
GND
RF IN
RF OUT
GND
GND
GND
RF2311
GENERAL PURPOSE AMPLIFIER
• General Purpose High Bandwidth Gain
Blocks
• IF or RF Buffer Amplifiers
• Broadband Test Equipment
• Final PA for Medium Power Applications
• Driver Stage for Power Amplifiers
The RF2311 is a general purpose, low cost low power RF
amplifierIC. The deviceis manufacturedonanadvanced
Gallium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as an easily cas-
cadable 50
Ω gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 1600MHz.
The gain flatness and high bandwidth make the device
suitable for many other applications as well. The device is
self-contained with 50
Ω input and output impedances,
and no external DC biasing elements are required to
operate as specified.
• DC to well over 1600MHz Operation
• Internally Matched Input and Output
• 14dB Small Signal Gain
• 4.2dB Noise Figure
• +9dBm Output Power
• Single 2.7V to 6V Positive Power Supply
RF2311
General Purpose Amplifier
RF2311 PCBA
Fully Assembled Evaluation Board
4
Rev C3 010228
.156
.152
.022
.018
5°
.056
.052
.195
.191
.240
.232
.050
.008
.004
MIN
.017
1
Package Style: SOP-8
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